아이에스 테크놀로지 Probe Card 제조 전문기업
| Content | Specification | Content | Specification |
|---|---|---|---|
| Material | W,BeCu,P7,AgW | PARA | 16 Para |
| Minimum Pad Pitch | 50 ㎛ | Needle Diameter | Ø1500 ~ 400 |
| Planarity | ±10 ㎛ | Test temperature | 25℃ ~125℃ |
| Tip Diameter | 50~300㎛ | Tip Alignment | ±5㎛ |
| Max Voltage | 2400V | Max Current | 160A |
Chip Resistor Probe Card 약자로 Chip Resistor( 칩 저항) Test에 사용하는 Probe Card
ESI 장비
GSI 장비
NEC 장비
ESI TYPE_Probe Card
LTR or GSI TYPE_Probe Card
NEC TYPE_Probe Card| General Specifications | |
|---|---|
| Probe Material | Tungsten, Beryllium-Copper, Tungsten-Rhenium |
| Probe Diameter | 200㎛ to 380㎛ |
| Tip Diameter | 30㎛ to 200㎛ |
| Tip Shape | Flat |
| Tip Length | 1,400㎛ to 2,400㎛ |
| Alignment | +/- 10㎛ |
| Planarity | +/- 10㎛ |
| Bending Angle | 101℃ ~ 103℃ |
| Probe Depth | 10,000㎛ to 15,000㎛(Measured from bottom of PCB |
| Contact Force | > 0.8gm/mils |
| Contact0r | KA100/254DPMD11TH |
